Silicon Bidirectional DIAC Trigger Diode DB3 SMA With Surface Mount Package
Features
1. Low reverse leakage
2. High forward surge capability
3. High temperature soldering guaranteed: 250℃/10 seconds, 0.375" (9.5mm) lead length
Mechanical Data
·Terminals: Plated axial leads
·Polarity: Color band denotes cathode end
·Mounting Position: Any
Absolute Maximum Ratings
| Symbols | Parameter | Value | Unit |
| DB3 |
| Pc | Power Dissipation on Printed Circuit [ L=10mm ] | TA=50℃ | 150 | mW |
| ITRM | Repetitive Peak on-state Current | tp=10us F=100Hz | 2.0 | A |
| TSTG/TJ | Storage and 0 perating Junction Temperature | -40 to +125 / -40 to 110 | ℃ |
Electrical Characteristics
| Parameter | Symbol | Test Conditions | Value | Unit |
| Breakover voltage | VBO | | MIN. | 28 | V |
| TYP. | 32 |
| MAX. | 36 |
| Breakover voltage symmetry | |VBO1-VBO2| | C=22nF** | MAX. | ±3 | V |
| Dynamic breakover voltage* | △V | VBO and VF at 10mA | MIN. | 5 | V |
| Output voltage* | VO | see diagram 2(R=20Ω) | MIN. | 5 | V |
| Breakover current* | IBO | C=22nF** | MAX. | 100 | μA |
| Rise time* | tr | | MAX. | 1.5 | μs |
| Leakage current* | IR | VR=0.5VBO max | MAX. | 10 | μA |
Notes:1.Electrical characteristics applicable in both forward and reverse directions.
2.Connected in parallel with the devices.
Size:
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Silicon Bidirectional DB3 DIAC Trigger Diode With High Forward Surge Capability Images
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